Abstract

In the present work, stannite Cu2CoSnS4 (CCTS) films were elaborated using spray pyrolysis method on soda-lime glass, at different deposition temperatures (Td = 250, 300, and 350 °C), followed by different chosen sulfurization temperatures (Ts = 450, 500, and 550 °C). X-ray diffraction (XRD) revealed the nearly single-phase formation of CCTS films at 300 °C deposition temperature. After sulfurization in argon flow, the XRD lines become narrower, the average crystallite size expanding above 70 nm. The Raman spectroscopy analysis confirmed the stannite structure formation, as well as the presence CoS2 secondary phases, which reduces at higher sulfurization temperature (550 °C). The energy dispersive spectroscopy results indicated atomic ratios of Cu/Co/Sn/S close to the ideal stoichiometric ratio 2:1:1:4. The room temperature photoluminescence emission is recorded with maximum in the 1.35–1.40 eV range. Thermoelectric properties are measured up to 130 °C, the films show poor power factor as a result of small positive Seebeck coefficients 10–45 μV K−1 and low electrical conductivity despite of having relatively high carrier concentration (∼1020 cm−3).

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