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Abstract
We have grown Bi2Sr2Co2Oy thin films on LaAlO3 (100) and fused silica substrates by pulsed laser deposition. The films on LaAlO3 are c-axis oriented and partially in-plane aligned with multiple domains, while the films on fused silica are preferred c-axis oriented without in-plane alignment. The Seebeck coefficient and resistivity of films on both substrates are comparable to those of single crystals. An oxide p-n heterojunction was formed by depositing Bi2Sr2Co2Oy film on Nb-doped SrTiO3 single crystal, which showed a rectifying behavior. These thin films and heterostructures may be used for future thermoelectric applications.
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