Abstract
Abstract In this work, we describe compositionally tunable AlxGa1−xN nanowires (0.66 ≤ x ≤ 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of AlxGa1−xN nanowires may be tuned by adjusting the vapor temperature of the AlCl3 and GaCl3 used in its production. The structural, chemical and optical properties of the AlxGa1−xN nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the AlxGa1−xN nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E 2 2 phonon exhibits two-mode behavior. The positions of the AlN-like E 2 2 , GaN-like E 2 2 and A1(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these AlxGa1−xN nanowires has been proposed to follow a vapor–solid–solid (VSS) mechanism.
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