Abstract
Antimony ions were implanted into ZnMnO films grown on silicon (Si) by radio-frequency magnetron sputtering. The implanted samples were treated by rapid thermal annealing and investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. In the wurtzite of ZnMnO, both manganese (Mn) and stibium (Sb) substituted the lattice position of zinc (Zn). The ZnMnO films were characterized by Raman scattering at 522 cm−1, attributed to a local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm−1 and 823 cm−1 were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
