Structural and photoluminescence properties of SnO 2:Ga films deposited on α-Al 2O 3 (0 0 0 1) by MOCVD

Abstract

Gallium-doped tin oxide (SnO 2:Ga) films have been prepared on α-Al 2O 3 (0 0 0 1) substrates at 500 °C by the pulse mode metalorganic chemical vapor deposition (MOCVD) method. The relative amount of Ga (Ga/(Ga+Sn) atomic ratio) varied from 3% to 15%. Post-deposition annealing of the films was carried out at different temperatures for 1.5 h in ambient atmosphere . The structural, electrical, optical and photoluminescence (PL) properties of the films have been investigated as a function of annealing temperature. All the films have the rutile structure of pure SnO 2 with a strong (2 0 0) preferred orientation. A single ultraviolet (UV) PL peak near 337.83 nm was observed at room temperature for the 3% Ga-doped as-grown film and near 336 nm for the 15%-doped film, which can be ascribed to electron transition from the oxygen vacancy and interstitial Ga 3+ donor levels to the acceptor level formed by the substitution of Ga 3+ for the Sn site. After annealing, the luminescence spectra have changed a little bit, which is being discussed in detail.