Abstract
Undoped, uniformly Si-doped, and δ-Si-doped GaAs layers grown by molecular-beam epitaxy on (100)- and (111)A-oriented GaAs substrates at a temperature of 230°C are studied. The As4 pressure is varied. The surface roughness of the sample is established by atomic-force microscopy; the crystal quality, by X-ray diffraction measurements; and the energy levels of different defects, by photoluminescence spectroscopy at a temperature of 79 K. It is shown that the crystal structure is more imperfect in the case of GaAs(111)A substrates. The effect of the As4 flux during growth on the structure of low-temperature GaAs grown on different types of substrates is shown as well.
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