Structural and photoluminescence properties of Ge–Si ultra-thin films andheterostructures

Abstract

This paper reviews recent advances in our current level of understanding of thephysics underlying the growth process of Ge thin films, (GenSin)p superlatticesand GeSi heterostructures on the Si(001)2 × 1 reconstructed surface. The role ofthermodynamics and silicon surface reconstruction is discussed, together withthe effects of Sb as a surfactant. Careful investigation of structural andphotoluminescence properties is reported.