Abstract
Films of CuInSe 2 were deposited onto glass substrates by a hot wall deposition method using bulk CuInSe 2 as a source material. All the deposited CuInSe 2 films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (101),(112),(103),(211),(220),(312) and (400) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra show a peak related to the band-to-band transition. The spectral response of CuInSe 2 thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 700–1200 nm. Films of higher thickness exhibited higher photosensitivity while low thickness films exhibited moderate photosensitivity. CuInSe 2-based Solar cells with different types of buffer layers such as CdS, CdSe, CuInSe 2 and CdSe 0.7Te 0.3 were fabricated. The current and voltage were measured using an optical power meter and an electrometer respectively. The fabricated solar cells were illuminated using 100 mW/cm2 white light under AM1 conditions.
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