Structural and Optoelectronic Properties of X3ZN (X = Ca, Sr, Ba; Z = As, Sb, Bi) Anti-Perovskite Compounds

Abstract

We employed first-principles calculations to predict the structural and optoelectronic properties of X3ZN (X = Ca, Sr, Ba; Z = As, Sb, Bi) anti-perovskite compounds using an all-electron full-potential linearized augmented plane-wave method. Optimized structural parameters are found to be in good agreement with the available experimental measurements. The electronic band structure is calculated using different exchange–correlation potentials which reveal that the investigated compounds are narrow direct band gap semiconductors. A direct narrow band gap at the center of the Brillouin zone emphasises the optical activity of these compounds. Prediction of the optical properties, such as the real and imaginary parts of the dielectric function and refractive index along with reflectivity and optical conductivity, reveals the importance of these compounds in the visible and near UV optoelectronic devices industry.