Structural and Optoelectrical Properties of ZnTe Thin Films Prepared by E-Beam Evaporation

Abstract

ZnTe thin films have been prepared by an electron-beam evaporation technique on glass substrates, changing the accelerating voltage and the substrate temperature at accelerating voltage of 2 kV. Structural analysis showed that all the films had cubic structure with preferential orientation along (111) direction, though (220) and (311) orientations were also present. The (111) peak intensity increased with increasing film thickness. The crystallite size increased with increasing film thickness. Conductivity measurements showed that the films were p-type. Films prepared at accelerating voltage of 2 kV exhibited minimum resistivity. Optical characterization indicated that both absorbing and transparent thin films can be achieved by using different deposition conditions. The optical bandgap value was found to vary with substrate temperature.