Abstract
Abstract Structural and optical studies of In y Ga 1− y As/GaAs and B x In y Ga 1− x − y As/GaAs quantum wells, grown by Metal Organic Chemical Vapor Deposition (MOCVD), with the same indium composition, have been achieved by High-resolution X-ray Diffraction (HRXRD) and Photoluminescence spectroscopy (PL). An important fraction of indium (36%) has been incorporated into GaAs and BGaAs confirmed the growth conditions. The strain effects have been reduced by In incorporation into BGaAs which show that a B x In y Ga 1− x − y As can be grown lattice-matched to GaAs. It has been shown that the BInGaAs PL band shifts significantly to low energy side (of a bout 50 meV) compared to InGaAs. The temperature dependence of the BInGaAs PL peak energy has shown an abnormal behavior. Based on these experimental results, we have suggested that the carrier recombination mechanisms in the BInGaAs QWs result from exciton-localization like mode. These results are attributed to the localized states induced by the clustering and the non-uniform insertion of boron atoms in BInGaAs QW.
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