Abstract
AgSbSe2 semiconducting thin films are successfully deposited using reactive evaporation technique at a substrate temperature of 398K. X-ray diffraction studies reveal that the films are polycrystalline in nature. The structural parameters such as average particle size, dislocation density, and number of crystallites per unit have been evaluated. Atomic Force Microscopy is used to study the topographic characteristics of the film including the grain size and surface roughness. The silver antimony selenide thin films have high absorption coefficient of about 105 cm−1 and it has an indirect band gap of 0.64eV.
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