Abstract
A great improvement of optical quality was observed from a ZnCdSe/ZnSe/ZnMgSSe single quantum well separate-confinement heterostructure grown on GaAs substrate with ZnSe/ZnCdSe strained-layer superlattices (SLS) buffer layers by molecular beam epitaxy. Transmission electron microscopy images showed that a pitted surface was generally formed after the desorption of GaAs substrate in a II–VI chamber. However, this pitted surface was smoothed out by the growth of SLS buffer layer. Near room temperature photoluminescence indicated that the carrier collection efficiency of quantum wells in the sample with SLS buffer layer is better than the sample only with a ZnSe buffer layer.
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