Abstract
Electron microscopy investigations of tellurium thin films implanted with singly ionized He ions have revealed the appearance of a large number of surface structures when Ns, the number of implanted ions per unit area within the films, exceeds 0.2×1015 ions/cm2 at a beam energy of 32 keV. This coincides with an observed discontinuity in the optical properties of the Te thin films and with a sudden decrease in the degree of orientation of the thin films as measured by X-ray diffraction. The same type of behaviour is observed for implantations with variable ion-beam energies and a fixed Ns of 0.5×1015 He ions/cm2, with a discontinuity apparent near a value of 30 keV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
