Abstract
Amorphous silicon carbonitride (a-SiCxNy) thin films were deposited by reactive sputtering from SiC target and N2/Ar mixtures. Their structural study was carried out by mean of RBS, FTIR, Raman and electron spin resonance analysis. The optical properties were determined by UV-visible spectroscopy. The fact to introduce different amounts of nitrogen with argon in the gas phase induced structural changes which are visible since 5 % of N2. For more than 30 % of nitrogen in the gas mixture, a N-saturated Si–C–N film were formed. The increase of nitrogen gas concentration induced the appearance of C-C sp2 character, an increase of the C≡N and dangling bonds densities. All these structural variations leaded to an increase of optical band gap from 1.75 to 2.35 eV.
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