Abstract
High quality Zn0.92Cd0.08O/ZnO multiple quantum wells with smooth interfaces have been prepared on c-plane sapphire substrates by pulsed laser deposition. The periodic structure has been characterized by scanning transmission electron microscope and energy dispersive x-ray spectroscopy line scans. The temperature dependent photoluminescence of Zn0.92Cd0.08O/ZnO exhibits an inconspicuous S-shaped property due to a combined effect of the slightly disordered ZnCdO alloy. We can observe both quantum confinement effects and quantum-confinement Stark effect in the quantum wells. We can modulate the well emission energy from 2.90 to 3.085 eV by varying the well thickness at room temperature.
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