Abstract
Silver films in the thickness range 3–12 nm were deposited on very clean Si(111) substrates at ambient temperature. The annealing up to temperatures of 650 °C was then studied using LEED/Auger, SEM and X-ray diffraction as well as resistivity and ellipsometry measurements. The films crack during annealing and silver islands are formed on the silicon surface. The coagulation results in a steep drop of the ellipsometric parameters Δ and Ψ in the temperature range 150–300 °C which can be attributed to the generation of surface plasmons and Mie plasmon polaritons, respectively.
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