Abstract
TEM investigation revealed that the rapid vacuum-thermal carbidization of silicon at 1100C leads to the formation of cubic silicon carbide (SiC) layers. The band of the IR transmission spectrum at 798 cm–1 corresponding to the stretching vibration of Si-C and the maximum of Raman spectrum at 793 cm–1 relating to transverse optical phonon mode of SiC confirm the formation of a layer of the cubic SiC politype. The absorption
 band of Si-O-Si (1100 cm–1) was found using the IR-spectroscopy. The dependence of the transmission coefficient on the wavenumber was determined.
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