Abstract
The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
Highlights
Low-density semiconductor quantum dots (QDs) have been one of the promising candidates in quantum information applications, such as single photon sources [1,2]
This is mainly attributed to the unknown position of an appropriate single QD capped for optical measurement
GaAs droplet epitaxy (DE) QD samples were grown by a molecular beam epitaxy (MBE) system
Summary
Low-density semiconductor quantum dots (QDs) have been one of the promising candidates in quantum information applications, such as single photon sources [1,2]. Less than 10 QDs per μm are preferred for a single photon source application, since optical interference from neighboring QDs could be avoided. In spite of advanced research on the application of low-density QDs, these QDs have been exploited in the scale of fundamental research. This is mainly attributed to the unknown position of an appropriate single QD capped for optical measurement. Optical measurement of low-density QDs was based on micro-photoluminescence (μ-PL). Because there is no information on the QDs in those patterns, this selection process to find
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