Abstract
Polycrystalline silicon (Si) films for solar cells have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films at different temperatures is investigated. Results reveal that over 90% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800/spl deg/C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
