Abstract
The N-doped β-Ga 2O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstructure, optical transmittance, optical absorption and optical energy gap of the N-doped β-Ga 2O 3 films are significantly changed with the increasing of ammonia partial pressure. The green, blue and ultraviolet emission bands are observed and discussed.
Published Version
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