Abstract
Indium-doped zinc oxide (In-doped ZnO) thin films were deposited on silicon substrates by radio frequency magnetron co-sputtering of ZnO and In targets. The effects of wet annealing at various temperatures on the films were investigated. All the films had a hexagonal wurtzite structure with preferred c-axis orientations. The crystal structure of the films was improved as the wet annealing temperature was increased to 800°C and then deteriorated at 900°C due to the presence of cracks and porosity. The surface morphologies of the films changed significantly as the wet annealing temperature reached above 800°C. Besides that, strong emission at near-band-edge of ZnO and green emission were observed as the annealing temperature increased. Overall, In-doped ZnO thin film annealed at 800°C has the best structural and optical properties.
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