Abstract
Ordered and perpendicular columnar arrays of In2O3 were synthesized on conducting ITO electrode by a simple glancing angle deposition (GLAD) technique. The as-deposited In2O3 columns were investigated by field emission gun-scanning electron microscope (FEG-SEM). The average length and diameter of the columns were estimated ∼400 nm and ∼100 nm, respectively. The morphology of the structure was examined by transmission electron microscopy (TEM). X-ray diffraction (XRD) analysis shows the polycrystalline nature of the sample which was verified by selective area electron diffraction (SAED) analysis. The growth mechanism and optical properties of the columns were also discussed. Optical absorption shows that In2O3 columns have a high band to band transition at ∼3.75 eV. The ultraviolet and green emissions were obtained from the In2O3 columnar arrays. The P-N junction was formed between In2O3 and P-type Si substrate. The GLAD synthesized In2O3 film exhibits low current conduction compared to In2O3 TF. However, the Si/GLAD-In2O3 detector shows ∼1.5 times enhanced photoresponsivity than that of Si/In2O3 TF.
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