Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature

Abstract

In this work erbium ions were implanted into AlN films grown on sapphire with fluence range: (0.5–2) × 10 15 at/cm −2, ion energy range: 150–350 keV and tilt angle: 0°, 10°, 20°, 30°. The optical and structural properties of the films are studied by means of photoluminescence and Raman spectroscopy in combination with Rutherford backscattering/channeling (RBS/C) measurements. The photoluminescence spectra of the Er 3+ were recorded in the visible and infrared region between 9 and 300 K after thermal annealing treatments of the samples. The emission spectrum of the AlN:Er films consists of two series of green lines centered at 538 and 558 nm with typical Er 3+ emission in the infrared at 1.54 μm. The green lines have been identified as Er 3+ transitions from the 2H 11/2 and 4S 3/2 levels to the 4I 15/2 ground state. Different erbium centers in the matrix are suggested by the change of infrared photoluminescence relative intensity of some of the emission lines when different excitation wavelengths are used. The relative abundances of these centers can be varied by using different implantation parameters. The Raman and RBS/C measurements show good crystalline quality for all the studied films.