Abstract
AbstractLuminescence properties of Er in GaN combined with the structural properties were studied by photoluminescence measurements and X‐ray diffraction measurements. It was found that Er atoms occupy two kinds of incorporation sites in GaN and only one kind of site is suggested to be active for the light emission. The maximum luminescence intensity was obtained with the Er concentration at around 4 at%. The concentration quenching was observed and the cause of the quenching is related to the degradation of crystal quality rather than the formation of the segregation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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