Abstract
AbstractThe present work concerns the electrochemical deposition of aluminum‐doped ZnO nanostructured thin films on SnO2:F‐covered glass substrates. Doped with Al nanostructured ZnO (ZnO:Al) films are obtained by an electrochemical process using a three‐electrode potentiostatic system with a saturated calomel electrode as reference electrode, in aqueous solution containing ZnCl2, KCl, and Al2(SO4)3. The influence of the deposition parameters on the structural properties of the obtained ZnO:Al layers is investigated by scanning electron microscopy (SEM), X‐ray diffraction (XRD) and atomic force microscopy (AFM). Energy‐dispersive X‐ray analysis (EDAX) is applied for measurement of the Al content in the films. The SEM micrographs and AFM pictures show that the ZnO:Al films consist of nanograins with a shape of walls. The XRD spectra demonstrate the characteristic (100), (002), (101), (110), and (103) reflections of the ZnO. The influence of the Al concentration on the IR reflectance spectra and the haze ratio of ZnO:Al thin films are presented and discussed.
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