Abstract
The authors have synthesized InN quantum dots by ion implantation into a Si (100) substrate followed by a postannealing process. X-ray photoemission spectroscopy data verified the formation of In–N bonding in both as-implanted and postannealed samples. Diffraction patterns from transmission electron microscopy (TEM) confirm that the dots are of cubic crystal (zinc-blende phase) with no presence of wurtzite InN. The silicon matrix provides a constraint for the formation of the InN cubic metastable phase. However, dislocations were revealed by high resolution TEM at the interfaces between the dots and the silicon. In addition, the authors found that as the annealing temperature or time increases, dot size increases and dot density decreases. Furthermore, they demonstrate that the main emission energy of zinc-blende InN dots is about 0.736eV.
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