Abstract
A cost-effective process for preparation of aluminum nitride was developed by using single-source precursor tris (N,N dimethylethylenediamine)AlCl3, which was prepared from anhydrous aluminum chloride and N,N dimethylethylenediamine (DMEDA) in 1:3 molar ratio at room temperature under N2. The pyrolysis of the precursor was carried out at various temperatures, pressures, and flow of gases (N2 and Ar) to optimize parameters. The resultant pyrolyzed residues were investigated using various instrumental techniques. X-ray diffraction (XRD) showed that AlN crystallizes in mixed-phase (hexagonal/cubic) and the grain size was estimated to be in the range of 4–10 nm. The band gap of AlN was investigated by UV-Vis spectroscopy and found to be ∼5.7 eV (6.1 eV bulk); TEM showed agglomerated crystallites of AlN.
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