Abstract
Ag2O (Silver Oxide) is an important p-type (in chasm to most oxides which were n-type), with a high conductivity semiconductor. From the optical absorbance data, the energy gap value of the Ag2O thin films was 1.93 eV, where this value substantially depends on the production method, vacuum evaporation of silver, and optical properties of Ag2O thin films are also affected by the precipitation conditions. The n-type and p-type silicon substrates were used with porous silicon wafers to precipitate ±125 nm, as thick Ag2O thin film by thermal evaporation techniques in vacuum and via rapid thermal oxidation of 400oC and oxidation time 95 s, then characterized by measurement of XRD, optical properties and scanning electron microscopy properties (SEM). Maximum value of photo response obtained from p-Ag2O/p-PS/Si photodetector results revealed two peak sat 600 nm and 800 nm. According to the x-ray diffraction four peaks appear, (111), (200), (110) and (311) Ag, respectively, (polycrystalline film) and lattice constant of (4.077 Å). Also the results showed a sharp increasing in the absorption-wave length plot of Ag2O film at UV and IR regions. The accumulation of the stars-like are semi-regular of the Ag2O nanocrystals on the surface of p-type PS and the other diffuse inside the pores in a nearly uniform distribution with a different grain size on the surface. The results of the dislocation density and strain are decreased with the grain size increasing.
Highlights
IntroductionThe objective of this work is to produce the nanocrystalline silver oxide films by means of thermal evaporation techniques in vacuum and via rapid thermal oxidation of 400oC and oxidation time 95 s, for Ag precipitated film on n-type and p-type wafers Si and porous Si(where the porous silicon is an affective material in optoelectronics filed due to its high absorption coefficient, low cost, simple synthesis technique and good anti-reflection coating [7,8], prepared by electrochemical etching and characterized via of XRD, scanning electron microscopy properties (SEM) and optical measurement towards its application as photo detectors, physical and chemical properties of silver and silver oxide are illustrated in Table
Silver oxide thin film was formed by Thermal Oxidation and the optical properties revealed that the direct band gap of 1.93eV measured by optical absorption experiments for Ag2O thin film was predestined and indicated to the effect of quantum size
X-ray diffraction measurement disclosed that the Ag2O film at (400oC) and (95 s) condition has apyramid - like crystal structure and the reflection was from [111]
Summary
The objective of this work is to produce the nanocrystalline silver oxide films by means of thermal evaporation techniques in vacuum and via rapid thermal oxidation of 400oC and oxidation time 95 s, for Ag precipitated film on n-type and p-type wafers Si and porous Si(where the porous silicon is an affective material in optoelectronics filed due to its high absorption coefficient, low cost, simple synthesis technique and good anti-reflection coating [7,8], prepared by electrochemical etching and characterized via of XRD, SEM and optical measurement towards its application as photo detectors, physical and chemical properties of silver and silver oxide are illustrated in Table.
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