Abstract
Preliminary results of growth of thin diamond film in a recently installed 3 kW capacity microwave plasma activated CVD (MW-PACVD) system are being reported. The films were deposited on Si (100) substrate at 850°C using methane and hydrogen mixture at 1·5 kW MW power. The grown polycrystalline films were characterized by micro-Raman, transmission electron microscope (TEM), spectrophotometer and atomic force microscope (AFM). The results were compared with that of a thicker diamond film grown elsewhere in a same make MW-PACVD system at relatively higher power densities. The presence of a sharp Raman peak at 1332 cm − 1 confirmed the growth of diamond, and transmission spectra showed typical diamond film characteristics in both the samples. Typical twin bands and also a quintuplet twinned crystal were observed in TEM, further it was found that the twinned region in thin sample composed of very fine platelet like structure.
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