Abstract
InAs x P 1− x (0≤ x≤1) nanocrystals with a size of 4–5 nm embedded in SiO 2 thin films were prepared by the radio frequency magnetron co-sputtering technique. X-Ray diffraction and Raman spectra suggest the existence of InAs x P 1− x nanocrystals in SiO 2 matrices. It was found that the frequencies of transverse-optical (TO) and longitudinal-optical (LO) phonons depended on the composition of the InAs x P 1− x nanocrystals. The optical absorption band edges of the InAs x P 1− x –SiO 2 composite films shift to lower energy with increasing the As content. The optical band gaps reveal a marked blue shift with respect to their bulk material. The marked blue shift of optical absorption edge indicates that the strong quantum confinement effect occurs in InAs x P 1− x -SiO 2 composite films.
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