Abstract
Heterostructures of AlGaN with multiple quantum wells were grown by metal-organic vapor phase epitaxy on semipolar (20-21) bulk AlN substrates. Smooth epitaxial surfaces with excellent heterostructure interfaces were demonstrated. Luminescence from the AlGaN multiple quantum wells emitting at λ = 237 nm show a substantial degree of polarization of about 35% as determined by low-temperature photoluminescence measurements.
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