Abstract
We investigate the structural and optical properties of InGaN-basedmulti-quantum wells grown on a–c plane sapphire substratesby atomic force microscopy, high-resolution x-ray diffraction andtemperature-dependent photoluminescence measurements. The multi-quantumwells grown on a-plane sapphire substrate show stronger excitonlocalization effect compared with that grown on the c-planesubstrate, although the threading dislocation densities in the twosamples are almost the same. We attribute the results to the differentin-plane strain of quantum well grown on different substrateorientations at the same growth temperature. Since the excitonlocalization effect plays a key role to obtain high efficiencyInGaN-based optoelectronics devices, the presented result should beemphasized.
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