Abstract
Cuprous oxide is deposited on various substrates such as stainless steel (SS), Cr-Au (20–100 nm) coated SS, fluorine doped tin oxide on glass (FTO-G), Cr-Au (20–100 nm) coated FTO-G and Ga doped ZnO (GZO) through potentiostatic electrodeposition method. A wide range of potential is used for deposition and all the results are in good agreement with Pourbaix diagram of copper. Morphological properties are optimized with respect to temperature, applied potential and pH. All the films are characterized through X-Ray diffractometry, Scanning Electron Microscope, thickness measurements through profilometer and UV-Vis-NIR analysis. Our study demonstrates to deposit a high quality cuprous oxide film through potentiostatic electrodeposition with respect to continuity and larger grains, which may enhance photovoltaic performance and also for use in photoelectrochemical conversion systems.
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