Abstract
Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and better stability. With this aim, Ga has been proposed as a dopant. In this study, the structural characteristics and surface morphology of ZnO films produced by PEMOCVD at a substrate temperature of 250 °C on the c-plane (001) of sapphire were investigated. Doping was realized with 1, 3, 5 and 10 wt.% of Ga 2(AA) 3 in the precursor's mixture. At lower contents, Ga stimulates growth of (002) oriented textured films and the smallest FWHM was obtained as low as 0.17° for ZnO:Ga with 1 wt.%. A change in preferential orientation as well as surface smoothing and roughness decreasing of the films were observed with further increasing Ga content in precursor's mixture. We assume a key role of Ga and note that such a feature would be beneficial for the application of ZnO thin films for formation of abrupt junctions in p–n device structures.
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