Abstract
CdSe1-xSx (x= 0.3, 0.4 and 0.6) thin films were deposited on quartz and silicon substrates by the method of high-frequency magnetron sputtering. The chemical composition analysis and crystal structure refinement was examined with using X-ray fluorescence spectroscopy and X-ray diffraction data. CdSe1-xSx thin films crystallizes in hexagonal structure (structure type – ZnO, space group P63mc (No. 186)). The lattice parameters (a, c and V), crystallite size (D), strain (ε), dislocation density (δ) and the texture coefficient TC(hkl) was estimated from X-ray diffraction analysis. Units-cell parameters decrease with increasing S content in CdSe1-xSx thin film.
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