Abstract
In this study the as-deposited and heat treated at 423K of conductive blend graphene oxide (GO)/ poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) thin films was prepared with different PEDOT:PSS concentration (0, 0.25, 0.5, 0.75 and 1)w/w on pre-cleaned glass substrate by spin coater. The XRD analysis indicate the existence of the preffered peak (001) of GO around 2θ=8.24° which is domain in all GO/ PEDOT:PSS films characterized for GO, this result approve the good quality of the PEDOT:PSS dispersion in GO, this peak shifted to the lower 2θ with increasing PEDOT:PSS concentration and after annealing process. The scanning electron microscopy (SEM) images and atomic force microscopy (AFM) clearly show the GO flakes and go to disappear with increasing the PEDOT:PSS concentration.
Highlights
Through those past few periods, natural semiconductors need been contemplated extensively, because of their provision over electronic units as an aftereffect from claiming moving forward the execution about gadgets and modifying those properties of the charge transfer
Graphene oxide (GO)/PEDOT:PSS thin films which prepared by solution process using spin coating technique
The adding of PEDOT:PSS with different concentrations (0.25, 0.5,0.75,1)w% cause the shifting in the characterized peak of Go toward the lower 2θ, this resut indicate the effect of PEDOT:PSS on the GO structure may be due to the thin layer shapes on the GO sheets and the transfer of the peak to the bottom 2θ representing the very thin nature of the polymer layers during the formation of the self-assembled ordered structure
Summary
Through those past few periods, natural semiconductors need been contemplated extensively, because of their provision over electronic units as an aftereffect from claiming moving forward the execution about gadgets and modifying those properties of the charge transfer. GO/PEDOT:PSS thin films which prepared by solution process using spin coating technique.
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