Abstract
SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor. Â
Highlights
Field effect transistors are unipolar three terminal solid state devices employing only the majority charge carriers in the conduction region
The essential factors that are often considered in the investigation of a semiconductor material for transistor application include the presence of suitable band gap energy, high electrical conductivity, ability to deposit the material using a low cost technique and the abundance of the elements in nature all of which are function of the structural and microstructural properties of the semiconductor material [3]
such as Tin (II) sulphide (SnS) thin film is relatively unexplored for application in a field effect transistor, as literatures pertaining to the application of SnS as semiconductor or transport channel of a field effect transistor is relatively scanty
Summary
Field effect transistors are unipolar three terminal solid state devices employing only the majority charge carriers in the conduction region. The essential factors that are often considered in the investigation of a semiconductor material for transistor application include the presence of suitable band gap energy, high electrical conductivity, ability to deposit the material using a low cost technique and the abundance of the elements in nature all of which are function of the structural and microstructural properties of the semiconductor material [3]. Metal chalcogenides such as Tin (II) sulphide (SnS) and metal dichalcogenides such as Tin (IV) sulphide (SnS2) are of interest as potential candidates for the semiconductor channel of field effect transistor. The study focuses on the structural and microstructural study of SnS thin film semiconductor material of 0.2< t ≤ 0.4 μm thickness for application in a field effect transistor
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.