Abstract
The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.
Highlights
The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type)
The achieved results of structural and microstructural measurements, par exellence unit-cell and microstrain parameters indicate that B atoms embedding did not generate disorder in PbTe-type structure
The foremost assumption is that B atoms, mostly already filled-up, formed vacancies in layers with the highest microstrain parameters: [h00] and [hh0]
Summary
Abstract: The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.
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