Abstract
VO2 film was deposited on Si (001) substrate by magnetron sputtering with substrate biasing. The structures and microstructures of the film were characterized by means of Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). A textured VO2 film with a thickness of approximately 300 nm was deposited on the Si substrate. Upon combining the selected-area electron diffraction, energy dispersive X-ray spectroscopy and high-resolution TEM results, it was clear that the film mainly contained a crystalline monoclinic VO2 phase, which is consistent with the Raman and XRD results. At the VO2 film/Si substrate interface, an amorphous layer (~15 nm) and a low-density region of crystalline VO2 (~50 nm) were observed. In addition, the XRD measurements conducted at different temperatures indicated that the structural transformation of the VO2 film from a low-temperature monoclinic structure to a high-temperature tetragonal structure occurred.
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