Abstract
Structural properties of Co/Gd multilayers grown by MBE on Sisubstrates with and without a Si-N buffer are compared. The x-ray and TEMinvestigation revealed a strong dependency of the structure on the existenceof the buffer layer. The multilayers deposited on pure Si substrate showpolycrystalline microstructure with significant correlation with respect tothe distinct crystallographic orientation related to the Si substrate. Thestructure deposited on the Si-N buffer can be described as amorphous. Astrong mixing of Co and Gd sublayers in samples deposited on Si-N can beconcluded while the multilayer on Si seems to be formed with rather lowintermixing. The structural difference between the studied samples was clearlyreflected in their respective magnetic properties.
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