Abstract
The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205, Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.
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