Abstract
Highly (111) oriented Mn(6.6%–29.8%) doped CuO thin films have been fabricated on thermally oxidized silicon substrate by radio-frequency magnetron sputtering. X-ray photoelectronic spectroscopy and resistivity studies indicate that both Cu and Mn ions have 2+ valences in the film. Ferromagnetism has been observed for 15.2%–29.8% Mn doped CuO thin film with a transition temperature between 87.0 and 99.5K. The origin of ferromagnetism is analyzed in the context of competition among several interactions between Mn and Cu ions. Highly resistive nature of the films eliminates the carrier mediate mechanisms. The ferromagnetism arises from the ferromagnetic coupling between Mn ions mediated by Cu ions.
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