Abstract
Ge 1 − x Fe x films (x=2.0%–24.0%) grown by low-temperature molecular beam epitaxy were shown to have a diamond-type crystal structure without any other crystallographic phase of precipitates, although they contain slightly nonuniform Fe distribution and tiny stacking fault defects. The lattice constant decreases linearly with increasing the Fe content x from 0% to 13.0%, and is saturated for x>13.0%. The Curie temperature (TC) increases in proportion to x (⩽13.0%) and is saturated for x>13.0%. The maximum TC value was ∼170K at x>13.0%. The structural and magnetic properties indicate that Ge1−xFex is an “intrinsic” ferromagnetic semiconductor.
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