Abstract
Epitaxially grown Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> VAl full-Heusler thin films were fabricated on single crystalline MgO (001) substrates by using an ultra-high-vacuum magnetron sputtering technique. X-ray diffraction revealed that epitaxial Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> VAl films with a highly L2 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> -ordered structure were obtained by annealing around 600 °C. For the films deposited without a buffer layer and annealed at 500 °C-600 °C, the saturation magnetization was about 240 emu/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> at 300 K, which was close to the theoretical value. The effective magnetic damping constant of Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> VAl thin films was investigated using the ferromagnetic resonance technique. The effective damping constant was much larger than expected due to the inhomogeneity in the Mn2VAl films.
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