Abstract
Mn-doped GaN epitaxial films (Ga1−xMnxN) were grown on sapphire (0001) by metal organic chemical vapor deposition. Mn concentration was determined by energy dispersive spectrometry. For Ga1−xMnxN with x up to 0.027, no secondary phases except for GaN were detected by high resolution x-ray diffractometer. Raman scattering spectra show that the longitudinal optical phonon mode A1(LO) of Ga1−xMnxN shifts toward lower frequency with increasing Mn concentration due to substitutional Mn incorporation. Electron spin resonance (ESR) measurements were performed and highly anisotropic sixfold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions. However, magnetometry reveals that all homogenous Ga1−xMnxN show paramagneticlike behaviors. From Brillouin function fit and ESR spectra, it is concluded that Mn ions are present as isolated paramagnetic centers.
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