Abstract
A study of technological parameters of growing of SiGe like number of Ge nano layers, layers thickness and temperature of substrate are reported. These parameters play an important role in the optical properties of SiGe nanostructures with Ge quantum dots. A long lifetime of radiative recombination for band-to-band transition is attributed to indirect band in Si. As a consequence, the dominant recombination at deep level defects is non- radiative. In order to enhance the intensity of luminescence band at 0.8 eV that related to radiative recombination of Ge quantum dots, the hydrogen plasma ion treatment of SiGe nanostructure were utilized. Improving of the luminescence intensity is an important parameter to increase the quantum efficiency of optoelectronic devices based on the Si nano layer with Ge quantum dots.
Highlights
Since silicon has an indirect band gap the radiative recombination life time is very long
The investigated structures were grown by Molecular Beam Epitaxy (MBE) from solid sources on Si substrates with (001) orientation at the Institute of Physics Semiconductor RAS (Pchelyakov et al, 2000)
Our experiments show the possibility of controlling the content of Ge in nanostructures SiGe in Ge quantum dots formed layers, which is important parameter in the quality of generated heterostructure
Summary
Since silicon has an indirect band gap the radiative recombination life time is very long. The main objective in the Si-based semiconductor optoelectronics is to improve luminescence efficiency (Paul, 2004). One of the promising methods is considered the creation of SiGe nanostructures with Quantum Dots (QD) Ge, which has the high luminescence efficiency at room tempera-ture (Pchelyakov et al, 2000). A method for controlling nucleation (Ray et al, 2011) and uniformity of growth in three dime-nsional islands Ge, based on pulsed irradiation by low-energy ions Ge own (≤100 eV), during heteroepitaxy nanostructures SiGe of molecular beam (Dvurechenskii et al, 2005). The improvement on structural and luminescence properties of SiGe nano-structures with QD Ge, grown under different conditions is presented
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