Structural and luminescence properties of laser assisted Eu3+ doped BaZrO3 thin films

Abstract

Eu3+ doped BaZrO3 thin films were deposited on quartz substrates in a wide range of oxygen pressure (1–300 mTorr), using Pulsed laser deposition technique. X-ray diffraction pattern showed the different growth orientation of the films with oxygen pressure (PO2). The different growth mechanisms were drawn to explanin the thin films growth mechanism at the different oxygen pressure. Time of flight secondary ion mass spectroscopy analysis exhibited homogeneous distribution of all the elements throughout the depth of the films. The depth profile anaylsis revealed sharp interface at the low PO2 and broad intermixing region of the films with the substrate at low PO2. Transmittance spectra revealed the different optical bandgap with different PO2. Excitation spectra showed a broad absorption band centered at 260 nm due to the absorption in the defect states. The emission spectra showed intense emission at 597 nm corresponding to the 5D0→7F1 transition of Eu3+. Apart from this, a broad blue-green emission was observed centered at 440 nm due to the trap levels associated with the oxygen vacancy below the conduction band. The energy transfer mechanism between the host to Eu3+ ion was described via a defect state process. Colour coordintes of the emission spectra showed that colour emission of thin films can be tuned by varying the oxygen pressure. The short-excited state lifetime and high value of internal quantum efficiency make these films potential candidates for light emitting diode application.