Abstract
The role of nitrogen (N) in InAs quantum dots (QDs) surfaces was studied by supplying a nitrogen (N) precursor to InAs QDs surfaces just before burying them under GaAs capping layers. Monomethylhydrazine was used as the N precursor. InAs QDs treated by such N exposure of their upper surfaces showed the following distinct improvements in their uniformity and efficiency: the peaks of histograms showing QD size distributions observed by atomic-force microscopy became narrower. Photoluminescence (PL) subpeaks originating from QD energy states showed clearer structures. The full widths at half maximum of the PL linewidths were reduced to 20 meV at room temperature, which is among the lowest reported. In addition to these observations of higher QD uniformities, the thermal activation energy for the temperature dependence of integrated PL intensity increased from 150 to 310 meV and also the PL efficiency increased ∼6-folds with the N-exposure of the InAs QD surfaces. The role of N in these marked improvements in characteristics was discussed on the basis of valence-force field model calculations.
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