Abstract
GaN layers and Al1−xInxN/AlN/GaN heterostructures have been studied by scanning probe microscopy methods. Threading dislocations (TDs), originating from the GaN (0001) layer grown on sapphire, have been investigated. Using Current-Atomic Force Microscopy (C-AFM) TDs have been found to be highly conductive in both GaN and AlInN, while using semi-contact AFM (phase-imaging mode) indium segregation has been traced at TDs in AlInN/AlN/GaN heterostructures. It has been assessed that In segregation is responsible for high conductivity at dislocations in the examined heterostructures.
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